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This is a surplus unit formerly located at Florida State University in Tallahassee, FL. There are some issues which will need to be addressed prior to the unit being used as designed, such as the parabolic mirrors will need to be replaced. We have contact information with the manufacturer in Russia; they are quite ready to provide any assistance necessary. We are offering this for sale and will entertain offers for all or part of the unit. It is complete with the Xenon power supply necessary to power the illumination device. Item is in clean, dry storage in the Orlando/Kissimmee, Florida, USA, area.
Difficulties for obtaining of high quality single crystals of wide range materials- metals, semiconductors, oxide compositions with melting points up to 3000°C can be overcome if to apply a new technological process of floating zone melting with contact free heating of material by focused by means mirror system of intensive light of xenon arc lamp. This process is realized in safe and ecologically pure floating zone melting machine URN-2-ZM, produced at present as industrial apparatus sample.
Offered technology provide a growing from the melt of perfect single crystals of tight melting (melting points up to 3000°C) materials, what obtaining by another methods is difficult of impossible.
This technology is realized on the floating zone melting apparatus with radiation (light) heating of type URN-2-ZM. Mirror system of the floating zone machine include the biellipsoid light concentrator with vertically aligned optical axis. In focal point of down reflector the intensive light source (Xe lamp of 3-10 kW power) is placed and in focal point of upper reflector the heated object is located. In electric scheme of the machine (motor drivers, switchers, thermo controller, measuring sets, programming devices the digital technique is used.
This technology allow producing in industrial scale single crystals suitable for application in microelectronics, laser and optic technique, audio-video writing and sensors devices etc. Very wide this technology can be apply in scientific researches for new materials development.
The apparatus URN 2 ZM for floating zone melting with radiation heating (heating by focused light) is destined for fulfillment of wide range investigations and high temperature processes:
• Elaboration and research of new materials with refractory oxide and tight melting metallic components.
• Single crystal growth of oxides and metals with melting temperatures up to 3000°C; crystal growth of incongruently melted composed materials.
• Phase diagram researches of refractory systems.
• High temperature treatment and crystal growth under arbitrary gas pressure up to 107 Pa (100atm).
• Physical and chemical high temperature researches in high clean conditions.
• The extra sharp quenching of oxides and metals from melting points.
• Production of single crystals and melted specimens of materials, for which the limitations due of very high melting points and melt aggressively are exist and requirements of purity and levels of physical characteristics can’t be reached under their growing by other methods.
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